通过氧化Cu膜制备Cu_2O薄膜  

Preparation of Cu_2O Thin Films by Oxidizing Cu Films

作　　者：孙杰[1] 高斐[1] 权乃承[1] 晏春愉[1] 张佳雯[1] 郝培风[1] 刘立慧[1] 

机构地区：[1]陕西师范大学物理学与信息技术学院,陕西西安710062

出　　处：《材料科学与工程学报》2009年第6期949-951,923,共4页Journal of Materials Science and Engineering

基　　金：陕西省自然科学基础研究计划资助项目(2005F37)

摘　　要：通过热蒸镀Cu膜并在空气中退火制备Cu2O薄膜,利用X射线衍射(XRD)、能量分散X射线谱(EDX)和原子力显微镜(AFM)研究了已沉积和不同温度退火薄膜的晶体结构、成份和表面形貌。结果表明,Cu膜在200℃退火30分钟可以得到具有单一成份的Cu2O薄膜。四探针测量得到所制备的Cu2O薄膜电阻率为0.22Ωcm。用紫外可见光分光光度计(UV-vis)研究了Cu2O薄膜的光学特性,得出其光学带隙为2.4eV。Cu2O films were prepared by thermal evaporation of metallic Cu and annealing Cu films in air. The structures, elements and topographies of the as-deposited film and the films annealed at different temperatures were studied by X-ray diffractometry （XRD）, energy dispersive X-ray spectroscopy （EDX）, and atomic force microscopy （AFM）. The results show that Cu2O film has been obtained by annealing the as-deposited Cu film at 200℃ for 30 minutes. Resistance of the Cu20 film is 0.22Ωcm measured by four-point probe. Optical property of the Cu2O film was studied using an ultraxlioletvisible spectrophotometer （UV-vis） and its optical band gap is 2.4eV.

关 键 词：Cu2O薄膜 热蒸镀 CU膜 退火 

分 类 号：O484.4[理学—固体物理] TN305.8[理学—物理]