Pt_xIr_(1-x)Si/p-Si红外探测器的研制  

Fabrication of Pt_xIr_(1-x)Si/p-Si IR Detector

作　　者：李华高[1] 刘慧[1] 白雪平[1] 刘英丽[1] 王艳[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2009年第6期815-817,827,共4页Semiconductor Optoelectronics

摘　　要：使用超高真空磁控溅射系统在p—Si上制备了铂铱硅（PtxIr1-xSi）薄膜，并制作了PtxIr1-xSi／p-Si红外探测器，研究了探测器在3～5btm波段的特性，结果表明，PtxIr1-xSi／p-Si势垒高度为0．177eV，相应红外探测器截止波长为7．0μm。与普通铂硅红外探测器相比，铂铱硅红外探测器在3～5μm中波红外波段响应明显增强。Ultra thin PtxIr1-xSi films were deposited on p-Si substrates with ultra high vacuum sputtering system and PtxIr1-xSi/p-Si（100） Schottky barrier detectors were fabricated and the characteristics of the detectors operating in the wavelength range of 3 - 5 μm were studied, with the barrier height of 177 meV and cutoff wavelength of 7.0μm. compared with ordinary Pt-Si IR detectors, PtxIr1-xSi detectors have a much higher response at 3-5 μm MWlR spectral range.

关 键 词：肖特基势垒 红外探测器 焦平面阵列 铂硅 铱硅 

分 类 号：TN215[电子电信—物理电子学]