铝背场对单晶硅太阳电池输出特性的影响  

Influence of Al-BSF on Electrical Properties of Monocrystalline Silicon Solar Cells

作　　者：周继承[1] 李斐[1] 陈勇民[1] 赵保星[2] 

机构地区：[1]中南大学物理科学与技术学院 [2]中南大学材料科学与工程学院,长沙410083

出　　处：《半导体光电》2009年第6期838-841,共4页Semiconductor Optoelectronics

基　　金：湖南省科技重大专项项目;长沙市科技计划重大专项项目

摘　　要：利用PC1D软件模拟了n+/p-p+结构的单晶硅太阳电池铝背场与硅片厚度对其输出特性的影响。结果表明,有铝背场时太阳电池获得明显的开路电压、短路电流以及光电转换效率的增益;硅片厚度越小,铝背场对其输出特性的影响越大;在有铝背场情况下,硅片厚度为120μm时,可获得最大的光电转换效率。The PC1D was used to simulate the influence of Al-BSF and wafer thickness on electrical properties of n^＋/p-p^＋ structural monocrystalline silicon solar cells. It is found that solar cells with the Al-BSF structure can gain obvious open circuit voltage, short-circuit current, as well as photoelectric conversion efficiency; the smaller the wafer thickness is, the bigger of the effect of Al BSF works on the electrical properties; when the wafer thickness is 120 m, the solar cells can get the biggest photoelectric conversion efficiency.

关 键 词：单晶硅太阳电池 铝背场 硅片厚度 输出特性 

分 类 号：O475[理学—半导体物理]