平面型InP/InGaAs雪崩光电二极管多级台阶结构研究  

Research on Multi-stepped Planar InGaAs/InP Avalanche Photodiodes

作　　者：肖雪芳[1] 

机构地区：[1]厦门理工学院电子与电气工程系,福建厦门361024

出　　处：《半导体光电》2009年第6期870-873,共4页Semiconductor Optoelectronics

基　　金：厦门理工学院经费支持项目(YKJ06011R)

摘　　要：平面型雪崩光电二极管(APD)在结弯曲处具有更高的电场,易导致结边缘的提前击穿。运用FEMLAB软件对多级台阶结构的平面型InP/InGaAs APD的电场分布进行了二维有限元模拟,在表面电荷密度为5×1011cm-2时分析了台阶级数、台阶高度等因素对边缘提前击穿特性的抑制程度。通过理论研究对平面InP/InGaAs APD进行了优化。For planar-type avalanche photodiode （APD）, it is hard to suppress edge prebreakdown with double-stepped p-region profile. In order to suppress the edge pre-breakdown, a multi-stepped p-region is proposed and studied. A finite element two-dimensional （2-D） simulation is performed to study the electric field of planar-type APD with multi-stepped pregion. The effects of the step number and deep in suppressing the edge pre-breakdown are analyzed and the planar-type APD structure is optimized theoretically.

关 键 词：边缘击穿 雪崩光电二极管 多级台阶 

分 类 号：TN312.7[电子电信—物理电子学]