一种高残碳率树脂为碳质前驱体制备致密SiC陶瓷  

Preparation of Silicon Carbide Using High Char-yield Resin as Carbonaceous Precursor

作　　者：刘波[1] 徐顺建[1,2] 

机构地区：[1]新余高等专科学校太阳能科学与工程系,江西新余338000 [2]西安交通大学金属材料强度国家重点实验室,陕西西安710049

出　　处：《江西科学》2009年第6期837-840,共4页Jiangxi Science

摘　　要：以一种残碳率达到67%的树脂取代反应形成技术常用的糠醇树脂为碳质前驱体制备了致密S iC陶瓷。结果表明,制得的S iC陶瓷具有典型的形貌特征,由S iC、S i以及极少量的未反应的C组成。S iC陶瓷的密度及弯曲强度分别为3.04 g.cm-3和360.7 MPa。碳质前驱体的取代依然保持了反应形成技术的主要特点,所以同样具有复杂形状、净成型能力。Dense SiC ceramic was prepared using high char-yield resin as carbonaceous precursor by reaction forming. At first the process for producing porous carbon perform was made sure by the investigation of resin curing and pyrolysis, then dense SiC was prepared using prepared carbon perform as template by in-situ reaction with liquid silicon. The results show that SiC ceramic with typical morphology and reasonable properties is obtained. The density and flexural strength of SiC ceramic is 3.04 g · cm^- 3 and 360.7 MPa,respectively. The ability to produce complex and near-net shapes is still kept.

关 键 词：聚合物 前驱体 渗入 碳化硅 形成 

分 类 号：TG323[金属学及工艺—金属压力加工]