LDMOS管并联电容提取及E类功率放大器设计  

Extraction of the LDMOS Transistor's Shunt Capacitance and Design of Class-E Power Amplifiers

作　　者：廖仲禹[1] 朱晓维[1] 徐樱杰[1] 

机构地区：[1]东南大学毫米波国家重点实验室,南京210096

出　　处：《固体电子学研究与进展》2009年第4期499-504,共6页Research & Progress of SSE

基　　金：国家863项目(2009AA011801);国家自然科学基金委创新群体基金(60621002)

摘　　要：研制了2.14GHz频段横向扩散金属氧化物半导体(LDMOS)晶体管的高效率E类功率放大器。采用并联谐振法结合ADS软件仿真提取出管子的关键参数Cds,并在此基础上进行电路仿真,设计了馈电网络和负载匹配网络,有效抑制谐波分量。给出了功率放大器的实验结果,输出功率达到38.55dBm时,附加效率达到64.1%,与仿真结果吻合良好。This paper presents a 2.14 GHz high efficiency class-E power amplifier based on LDMOS transistors. Using the parallel resonant method, the key parameter Cds of the transistor is extracted by simulation on ADS. Based on this parameter, feed network and load network are designed to reduce harmonics. Finally, the experimental result is given and matches with simulation data. It gives an output power of 38.55 dBm with a power-added efficiency of 64.1 %.

关 键 词：E类 高效率 功率放大器 横向扩散金属氧化物半导体 

分 类 号：TN722.75[电子电信—电路与系统] TN43