一种采用BiCMOS工艺的SiGeHBT基区生长方法  

Growth Technology of SiGe HBT Base Layer by Using BiCMOS Process

作　　者：杨洪东[1] 李竞春[1] 于奇[1] 周谦[1] 谭开州[2] 张静[2] 

机构地区：[1]电子薄膜与集成器件国家重点实验室,电子科技大学,成都610054 [2]模拟集成电路国家重点实验室,重庆400060

出　　处：《固体电子学研究与进展》2009年第4期589-592,共4页Research & Progress of SSE

基　　金：模拟集成电路国家重点实验室项目(51439010204DZ0219)资助

摘　　要：为抑制SiGeHBT基区生长过程中岛状物生成,降低位错密度,基于渐变温度控制方法和图形外延技术,结合BiCMOS工艺,研发了在Si衬底上制备高质量Si1-xGex基区的外延生长方法。通过原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线双晶衍射(XRD)测试,显示所生长的Si1,Gex基区表面粗糙度为0.45nm,穿透位错密度是0.3×103～1.2×103cm-2。,在窗口边界与基区表面未发现位错堆积与岛状物。结果表明,该方法适宜生长高质量的SiGeHBT基区,可望应用于SiGeBiCMOS工艺中HBT的制备。To decrease the dislocation density and prevent Ge island from forming, a pattern epitaxial technology with gradual temperature control has been developed for fabricating SiGe HBT base layer which is compatible with BiCMOS process. The measurement results of SEM AFM, XRD show that RMS roughness is 0. 45 nm, the threading dislocation density is 0. 3 × 10^3 cm-2-1. 2 × 10^3cm-2, and dislocation accumulation and Ge island aren＇t found on the boundary of the windows and the surface. These indicate the process technology could grow high quality SiGe base layer and be applied to fabricate HBT in SiGe BiCMOS process.

关 键 词：锗硅基区 渐变温度控制 图形外延 锗硅BiCMOS 

分 类 号：TN304.1[电子电信—物理电子学] TN304.05