宽带HBT VCO单片电路的设计和制作  

Design and Simulation of a Broadband HBT VCO Monolithic Circuit

作　　者：陈凤霞[1] 蔡文胜[2] 戚伟[3] 李远鹏[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]中国人民解放军空军驻石家庄地区军事代表处,石家庄050051 [3]中国国防科技信息中心,北京100036

出　　处：《半导体技术》2010年第1期8-13,共6页Semiconductor Technology

基　　金：国家重点基础研究发展计划资助(2009CB320200)

摘　　要：针对传统采用的VCO设计理论,分析了VCO的基本结构及其工作原理,分析了负阻法和反馈法的优缺点,采用虚地法对VCO电路进行了分析和设计,从而简化了VCO的设计。同时利用EDA工具对微波宽带VCO单片电路进行优化和仿真,采用多种方法提高芯片性能。基于HBT工艺,设计出了宽带、低相位噪声的VCO单片电路,芯片工作电压为5V,工作电流为50～58mA,VCO振荡频率为3.2～6.2GHz,相噪为-73dBc/Hz@10kHz,输出功率11～14dBm。同时还阐述了采用片上外加变容管的优缺点以及改进方法。According to the conventional design theory of the VCO, the basic structure and operating principle were analyzed. The comparison of the negative-resistance theory and feedback theory were described. With the virtual ground and feedback theory, a VCO monolithic circuit was designed in a simpler flow. The VCO with broad operating band and low phase noise was fabricated by HBT process with 5 V operating voltage and 50 to 58 mA operating current. The resonance frequency range covers from 3.2 GHz to 6.2 GHz, and the phase noise exhibits lower than - 73 dBc/Hz @ 10 kHz frequency offset. The VCO can offer 11 dBm to 14 dBm RF power to the 50Ω load. In addition, the varactor flip-chip and its improvement were expatiated.

关 键 词：压控振荡器 频率 虚地 负阻 异质结双极晶体管 

分 类 号：TN752[电子电信—电路与系统]