栅氧化层制程对IC产品可靠性的影响  

Effect of Gate Oxide Process on Reliability of IC Products

作　　者：曾梁英 阮玮玮 胡子信 李明 

机构地区：[1]中芯国际半导体有限公司,上海201203

出　　处：《半导体技术》2010年第1期90-93,共4页Semiconductor Technology

摘　　要：栅氧化层变薄的趋势使得栅氧化层制程对IC产品可靠性的影响成为业界关注的焦点之一。在0.18μm工艺的基础上,针对6V器件对应的氧化层,设计了两种不同的栅氧化层生长方式,并对这两种方法生长的栅氧化层进行了电压扫描的可靠性测试验证,并结合失效分析的结果对氧化层质量进行了分析。实验结果表明,将湿氧法(WGO)与高温氧化物沉积(HTO)工艺相结合,极大地提高了栅氧化层厚度的均匀性,增强了产品可靠性。The effect of gate oxide process on the reliability of ICs becomes a major concern as the gate oxide is becoming thinner. Based on 0.18 μm technology and a 6 V operation voltage device, two different kinds of gate oxide processes were designed. The voltage ramp reliability tests were performed on the two different kinds of gate oxide, and failure analysis was executed to analyze the quality of gate oxide. The experiment results show that the process, which combined wet gate oxide and high temperature oxide, would greatly improve gate oxide thickness uniformity and enhance reliability of products.

关 键 词：栅氧化层 可靠性 高温氧化物沉积 电压扫描 

分 类 号：TN306[电子电信—物理电子学]