VHF-PECVD沉积本征微晶硅薄膜激活能特性研究  

Investigation on Activation Energy of Intrinsic Microcrystalline Silicon Thin Films Deposited by VHF-PECVD

作　　者：陈庆东[1] 王俊平[1] 李洁[1] 张宇翔[2] 卢景霄[2] 

机构地区：[1]滨州学院物理与电子科学系,滨州256600 [2]郑州大学材料物理教育部重点实验室,郑州450052

出　　处：《人工晶体学报》2009年第6期1424-1428,1432,共6页Journal of Synthetic Crystals

摘　　要：采用激活能测试装置测量VHF-PECVD高速沉积的本征微晶硅薄膜,并对不同晶化率的样品和不同沉积功率、不同沉积压强条件下沉积制备的样品的激活能进行了分析研究。结果表明:在非晶-微晶相变域附近,激活能随着晶化率的升高而降低;随着沉积功率的增大和沉积气压的增大,沉积速率提高,样品的激活能升高,通过提高沉积功率和沉积气压可以有效的抑制氧污染。Intrinsic microcrystalline silicon thin films were deposited by VHF-PECVD, the activation energy of thin films were measured by activation energy testing equipment. The activation energy of samples with different crystalline volume fractions prepared at different power and different pressure were studied. The results showed that the activation energy of samples deposited at amorphous/microcrystalline transition zone decreased as the crystalline volume fractions increasing. As the depositing power and pressure increasing, the depositing rates and activation energy were also increased. As a result, oxygen contamination could be suppressed by increasing depositing rates using relatively higher power and pressure.

关 键 词：VHF-PECVD 微晶硅 激活能 

分 类 号：TN304.12[电子电信—物理电子学]