Ta掺杂VO_2多晶薄膜的相变特性  

Phase Transition Properties of Tantalum Doped Polycrystalline Thin Film Formed by Sol-Gel Method

作　　者：赵蒙[1] 李金华[1] 郑巍峰[1] 付学成[1] 

机构地区：[1]江苏工业学院功能材料实验室,江苏常州213164

出　　处：《江苏工业学院学报》2009年第4期24-28,共5页Journal of Jiangsu Polytechnic University

基　　金：国家自然科学基金资助(10675055);常州市科技计划资金资助(CE2005027)

摘　　要：以氧化二乙酰丙酮合钒(C10H14O5V)为前驱体,乙醇钽[Ta(OC2H5)5]为掺杂剂,用溶胶-凝胶方法在Si(100)和SiO2/Si衬底上制备了V1-xTaxO2(x=0-0.1)多晶薄膜。XRD谱图显示薄膜呈(011)面取向生长。随着Ta掺杂量的增大,d(011)基本呈线性增大表明Ta替代了V在晶格中的位置,实现了替位掺杂。每掺杂1%原子比的Ta,相变温度降低7.8℃,相变热滞减小1℃。SiO2/Si衬底上5%原子比掺杂薄膜的相变温度为29.5℃,室温(300 K)电阻-温度系数(TCR)为-8.44%/K。两种衬底上掺杂V0.9Ta0.1O2薄膜的升温和降温电阻-温度曲线基本重合。实验结果显示,Ta是降低VO2薄膜的相变温度和消除相变热滞的有效掺杂剂。V1-xTaxO2（x=0-0.1）polycrystalline thin films were deposited on Si（100）and SiO2/Si substrates by Sol-Gel method used VO（acac）2 as a precursor and tantalum pentaethoxide as a dopant.The XRD patterns showed the high（011） orientation of films.A linear increase in the value of d（011） with increasing doped tantalum content is also obtained,which means that the Ta5＋ substitutes the position of V4＋ in the sublattice.The transition temperature and hysteresis width are lowered by 7.8℃ and 1℃ respectively,per 1at.% Ta doped.For V0.95Ta0.05O2 film on SiO2/Si substrate,the phase transition temperature is 29.5℃,and the temperature coefficient of resistance（TCR） is-8.44%/K at 300K.The heating and cooling R-T curve of V0.9Ta0.1O2 films almost overlap.These properties indicate that Tantalum is an efficient dopant for VO2 film to decrease the transition temperature and eliminate hysteresis.

关 键 词：二氧化钒薄膜 掺杂 相变 电阻温度系数 溶胶-凝胶法 

分 类 号：O484[理学—固体物理] O792[理学—物理]