Effect of carrier recombination mechanisms on the open circuit voltage of n^+-p GaInAsSb thermophotovoltaic cells  

作　　者：彭新村 郭欣 张宝林 李香萍 赵晓薇 董鑫 郑伟 杜国同 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University

出　　处：《Optoelectronics Letters》2010年第1期11-14,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.60676040);the Fund of State Key Laboratory on Integrated Optoelectronics

摘　　要：By analyzing the main recombination mechanisms in GaInAsSb materials, the dependences of the dark current density and open circuit voltage in n+-p GaInAsSb thermophotovoltaic cells on the recombination parameters, carrier concentration and cell thickness are calculated. The results show that the dark current mainly comes from p-region, and it is related with the surface and Auger recombinations in low and high carrier concentration ranges, respectively. The surface and Auger recombinations can be suppressed by reducing the surface recombination velocity and carrier concentration, respectively. The dark current density can be suppressed by optimizing material parameters and device surface passivation technique. So the high open circuit voltage can be obtained for GaInAsSb thermophotovoltaic cells.By analyzing the main recombination mechanisms in GaInAsSb materials, the dependences of the dark current density and open circuit voltage in n^＋-p GaInAsSb thermophotovoltaic cells on the recombination parameters, carrier concentration and cell thickness are calculated. The results show that the dark current mainly comes from p-region, and it is related with the surface and Auger recombinations in low and high carrier concentration ranges, respectively. The surface and Auger recombinations can be suppressed by reducing the surface recombination velocity and carrier concentration, respectively. The dark current density can be suppressed by optimizing material parameters and device surface passivation technique. So the high open circuit voltage can be obtained for GaInAsSb thermophotovoltaic cells.

关 键 词：GAINASSB 重组机制 开路电压 电池 光电 表面复合速度 运营商 载流子浓度 

分 类 号：TM914[电气工程—电力电子与电力传动]