Design and fabrication of Si LED with the N-well-P^+ junction based on standard CMOS technology  

作　　者：杨广华 毛陆虹 黄春红 王伟 郭维廉 

机构地区：[1]School of Electronic and Information Engineering,Tianjin University [2]Institute of Information and Communication,Tianjin Polytechnic University [3]Institute of Semiconductors,Chinese Academy of Science

出　　处：《Optoelectronics Letters》2010年第1期15-17,共3页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (Nos.60536030,60676038);the Key Project of Tianjin (No.06YFJZJC00200)

摘　　要：A wedge shape Si LED is designed and fabricated with 0.35 μm double-grating standard CMOS technology. The device structure is based on the N-well-P+ junction. The P+ has a wedge shape and is surrounded by the N-well. The micrographs of Si LEDs' emitting and layout are captured. The I-V characteristic and spectra of the Si LED are tested. Under room temperature and backward bias, its radiant luminosity is 12 nW at 100 mA, and the wavelength of the emitting peak is located at 764 nm.A wedge shape Si LED is designed and fabricated with 0.35 μm double-grating standard CMOS technology. The device structure is based on the N-well-P＋ junction. The P＋ has a wedge shape and is surrounded by the N-well. The micrographs of Si LEDs＇ emitting and layout are captured. The I-V characteristic and spectra of the Si LED are tested. Under room temperature and backward bias, its radiant luminosity is 12 nW at 100 mA, and the wavelength of the emitting peak is located at 764 nm.

关 键 词：硅发光二极管 CMOS技术 标准 设计 制造 微米技术 显微照片 光谱测试 

分 类 号：TN312.8[电子电信—物理电子学] TN912.3