低温退火对InAsSb材料结构特性的影响  

Influence of Low-Temperature Annealing on Structure Speciality of InAsSb

作　　者：刘晓明[1] 李洪涛[1] 李美成[1] 赵连城[1] 

机构地区：[1]哈尔滨工业大学,黑龙江哈尔滨150001

出　　处：《稀有金属材料与工程》2009年第A02期606-608,共3页Rare Metal Materials and Engineering

摘　　要：用分子束外延(MBE)方法生长了InAsSb/InSb多量子阱结构,并对其进行250℃、8h的退火。采用X射线光电子能谱(XPS),通过Ar离子刻蚀对样品退火前后进行了深度分析,研究退火对In、As、Sb3种元素价态和纵向元素浓度分布的影响。结果表明,长时间低温退火增强了表面氧化,促使As和Sb元素发生次层原子向表层的扩散和样品内部该两种元素的扩散。InAsSb/InSb muiti-quantum wells were grown by molecular beam epitaxy（MBE） and then they were annealed at 250 ℃ for 8 h. X-ray photoelectron spectrum was used to study the influence of annealing on the valences and atoms distribution of In, As and Sb by Ar ion bombardment. The results show that： after annealing, the oxidation of the elements is intensified; As and Sb of the subsurface diffuse to the surface and the ones of the inner layers also diffuse to each other.

关 键 词：XPS INASSB 扩散 

分 类 号：TB303[一般工业技术—材料科学与工程]