Y掺杂BST薄膜介电性能研究  

Dielectric Properties of Yttrium-Doped Barium Strontium Titanate (BST) Films by Improved Sol-Gel Method

作　　者：潘笑风[1] 廖家轩[1] 王洪全[1] 张佳[1] 傅向军[1] 魏雄邦[1] 

机构地区：[1]电子科技大学,四川成都610054

出　　处：《稀有金属材料与工程》2009年第A02期621-623,共3页Rare Metal Materials and Engineering

基　　金：电子科技大学中青年学术带头人培养计划(Y02018023601053);博士点基金(20060614021);四川省应用基础研究(2008JY0057)资助

摘　　要：用改进溶胶-凝胶法在Pt/Ti/SiO2/Si上制备了钇(Y)掺杂Ba0.6Sr0.4TiO3(BST)薄膜,研究了Y掺杂对BST薄膜表面结构和介电性能的影响。XPS结果表明,Y掺杂有利于薄膜钙钛矿结构的形成,但对氧空位没有明显的抑制作用。SEM和AFM结果表明,Y掺杂能缓解薄膜应力、减少薄膜裂纹、细化晶粒,进而改善薄膜的表面结构。在进行Y掺杂后,薄膜的介电性能得到明显提高,40V外加电压下的介电调谐率大于40%及零偏压下介电损耗为0.0210,优化因子大于20。Yttrium （Y）-doped Ba0.6Sr0.4TiO3 （BST） films were prepared on Pt/Ti/SiO2/Si by improved Sol-gel method. The surface structure and dielectric properties of the BST films were investigated. X-ray photoelectron spectrum shows that the surface structures of Y-doped BST films are composed of perovskite structure and non-perovskite structure, and Y doping is helpful to increase the amount of perovskite structure, but is not so obvious to reduce oxygen vacancies. Scanning electron microscope and atomic force microscope exhibit that Y doping is beneficial to reduce stress and cracks, make crystal size smaller, and thus improve film surface structure. Also, Y doping markedly improves film dielectric properties with more than 40% tunability at 40 V, about 0.0210 dielectric loss （ranδ） at zero bias and hence merit value more than 20 figure.

关 键 词：掺杂 钛酸锶钡薄膜 钇 溶胶-凝胶法 介电性能 

分 类 号：O484.42[理学—固体物理]