铈掺杂钛酸锶钡薄膜的结构及介电性能  

Structures and Dielectric Properties of Ce-Doped BST Films

作　　者：傅向军[1] 廖家轩[1] 张佳[1] 潘笑风[1] 王洪全[1] 魏雄邦[1] 

机构地区：[1]电子科技大学,四川成都610054

出　　处：《稀有金属材料与工程》2009年第A02期624-626,共3页Rare Metal Materials and Engineering

基　　金：电子科技大学中青年学术带头人培养计划(Y02018023601053);博士点基金(20060614021);四川省应用基础研究(2008JY0057)

摘　　要：用改善的溶胶凝胶法制备铈掺杂钛酸锶钡(Ba0.6Sr0.4TiO3,BST)薄膜,研究其结构与介电性能。X射线光电子能谱表明,铈掺杂显著地减少了薄膜表面非钙钛矿结构。但是,由于掺杂薄膜较薄且掺杂量小,X射线衍射结果未见明显变化。原子力显微镜结果表明,掺杂BST薄膜表面光滑致密。掺杂BST薄膜的介电性能大幅度提高,在40V外加电压下介电调谐率达60.8%,零偏压下的介电损耗为0.0265。同时,就有关结构及介电性能改善的机制进行了讨论。Cerium （Ce）-doped barium strontium titanate （Ba0.6Sr0.4TiO3, BST） films were prepared by improved Sol-gel method. The structure and dielectric properties of the films were studied. X-ray diffraction shows the Ce-doped BST films exhibit no obvious change in phase structure because the films are quite thin and the doping content of Ce is low. However X-ray photoelectron spectroscopy shows that the Ce-doped BST films display significant decrease in non-perovskited structure. Atomic force microscope presents that the Ce-doped BST films are smooth and dense. The dielectric properties measurement reveals that the Ce-doped BST films show marked improvement in dielectric properties. The tunability can reach 60.8% at 40 V, and the dielectric loss （tanδ） is 0.0265 at zero bias. Also, the related mechanism of Ce doping for improvement of structure and dielectric properties is presented.

关 键 词：铈掺杂 钛酸锶钡薄膜 钙钛矿结构 介电性能 

分 类 号：TB383.2[一般工业技术—材料科学与工程]