A 2.4GHz power amplifier in 0.35μm SiGe BiCMOS  

作　　者：郝明丽 石寅 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences [2]Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2010年第1期65-68,共4页半导体学报（英文版）

摘　　要：This paper presents a 2.4 GHz power amplifier （PA） designed and implemented in 0.35μm SiGe BiCMOS technology. Instead of chip grounding through PCB vias, a metal plate with a mesa connecting ground is designed to decrease the parasitics in the PCB, improving the stability and the gain of the circuit. In addition, a low-pass network for output matching is designed to improve the linearity and power capability. At 2.4 GHz, a P1dB of 15.7 dBm has been measured, and the small signal gain is 27.6 dB with S11 〈 -7 dB and S22 〈 -15 dB.This paper presents a 2.4 GHz power amplifier （PA） designed and implemented in 0.35μm SiGe BiCMOS technology. Instead of chip grounding through PCB vias, a metal plate with a mesa connecting ground is designed to decrease the parasitics in the PCB, improving the stability and the gain of the circuit. In addition, a low-pass network for output matching is designed to improve the linearity and power capability. At 2.4 GHz, a P1dB of 15.7 dBm has been measured, and the small signal gain is 27.6 dB with S11 〈 -7 dB and S22 〈 -15 dB.

关 键 词：2.4 GHz PA SiGe BiCMOS PARASITICS 

分 类 号：TN386.1[电子电信—物理电子学]