PARASITICS

作品数：5被引量：2H指数：1
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相关领域：电子电信更多>>
相关期刊：《Transactions of Nanjing University of Aeronautics and Astronautics》《CSEE Journal of Power and Energy Systems》《Journal of Semiconductors》更多>>
相关基金：国家自然科学基金更多>>
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Analysis of Drain Modulation for High Voltage GaN Power Amplifier Considering Parasitics被引量：1
《Transactions of Nanjing University of Aeronautics and Astronautics》2022年第5期521-529,共9页CHEN Xiaoqing CHENG Aiqiang ZHU Xinyi GU Liming TANG Shijun 
supported by the Pri⁃mary Research&Development Plan of Jiangsu Province(Nos.BE2022070,BE2022070-2).
For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive ...
关键词：drain modulation GAN high voltage power amplifier parasitic inductance N-MOS driver 
EMC Improvement for High Voltage Pulse Transformers by Pareto-optimal Design of a Geometry Structure Based on Parasitic Analysis and EMI Propagation被引量：1
《CSEE Journal of Power and Energy Systems》2021年第5期1051-1063,共13页Mohamad Saleh Sanjari Nia Pourya Shamsi Mehdi Ferdowsi 
High voltage pulse transformers have an essential role in pulsed power systems and power conversion applications.Improving the electromagnetic behavior of such devices leads to better efficiency and low-level electrom...
关键词：EMC/EMI geometry structure pareto-optimal techniques PARASITICS pulsed power system transformer 
An S/H circuit with parasitics optimized for IF-sampling
《Journal of Semiconductors》2016年第6期162-166,共5页郑旭强 李福乐 王志军 李玮韬 贾雯 王志华 岳士岗 
supported by the Shenzhen Project(No.JSGG20150512162029307)
An IF-sampling S/H is presented,which adopts a flip-around structure,bottom-plate sampling technique and improved input bootstrapped switches.To achieve high sampling linearity over a wide input frequency range,the fl...
关键词：sample-and-hold（S/H） IF-sampling bootstrapped switches parasitics optimization high linearity 
A 2.4GHz power amplifier in 0.35μm SiGe BiCMOS
《Journal of Semiconductors》2010年第1期65-68,共4页郝明丽 石寅 
This paper presents a 2.4 GHz power amplifier （PA） designed and implemented in 0.35μm SiGe BiCMOS technology. Instead of chip grounding through PCB vias, a metal plate with a mesa connecting ground is designed to d...
关键词：2.4 GHz PA SiGe BiCMOS PARASITICS 
A 2.4-GHz low power dual gain low noise amplifier for ZigBee
《Journal of Semiconductors》2009年第7期109-113,共5页高佩君 闵昊 
supported by the Innovation Fund of Fudan University,Shanghai, China
This paper presents a fully differential dual gain low noise amplifier（DGLNA） for low power 2.45-GHz ZigBee/IEEE 802.15.4 applications.The effect of input parasitics on the inductively degenerated cascode LNA is ana...
关键词：CMOS low noise amplifier input parasitics low power noise figure ZIGBEE IEEE 802.15.4 
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