硼掺杂对金刚石薄膜载流子浓度的影响  

Effects of boron doping on carrier concentration of diamond film

作　　者：程强[1] 王颖蕾[1] 陈希明[1] 付长风[1] 李杰[1] 

机构地区：[1]天津理工大学电子信息工程学院,天津300384

出　　处：《天津理工大学学报》2009年第6期65-67,共3页Journal of Tianjin University of Technology

摘　　要：采用固体三氧化二硼,在硅衬底上用HFCVD法生长金刚石薄膜.对CVD金刚石薄膜的进行了表面形貌和结构进行了研究,并测试了不同硼掺杂浓度的金刚石膜载流子浓度及其电阻率.结果表明:金刚石膜结构致密,硼掺杂有利于改善膜质量,膜中载流子浓度随着掺杂浓度的提高不断提高.Boron doped diamond films are grown by HFCVD method.The dopant is solid B2O3,which locates in a round groove on the sample silicon.The research is concerned of the CVD diamond film morphology and resistivity and concentration with different boron concentrations.It is showed that the structure of diamond film is very dense and it is good for improve the diamond film s quality with concentration of boron-doped.The carrier concentration of diamond film goes up along with the concentration of boron-doped.

关 键 词：CVD金刚石薄膜 硼掺杂 电学性能 

分 类 号：TN304.23[电子电信—物理电子学] TG135.5[一般工业技术—材料科学与工程]