常压化学气相沉积法制备二氧化钛薄膜的沉积工艺及薄膜均匀性  

DEPOSITION PROCESS AND UNIFORMITY OF TITANIUM DIOXIDE FILM PREPARED BY ATMOSPHERE CHEMICAL VAPOR DEPOSITION

作　　者：庞世红[1] 王承遇[2] 马眷荣[1] 马振珠[1] 

机构地区：[1]中国建筑材料科学研究总院,北京100024 [2]大连工业大学,辽宁大连116034

出　　处：《硅酸盐学报》2010年第1期64-67,共4页Journal of The Chinese Ceramic Society

摘　　要：利用常压化学气相沉积法在浮法玻璃表面制备了二氧化钛薄膜。研究了水蒸气、氧气含量和衬底温度以及反应器与衬底的距离对薄膜制备过程中沉积速率的影响。结果表明:当水蒸气质量浓度为50mg/L。氧气含量为总气体流量的8%时,薄膜的沉积速率可达30nm/s,随着衬底温度从300℃升到600℃,薄膜的沉积速率从15nm/s增加到30nm/s;然而随着反应器与衬底的距离从2mm增加到12mm,薄膜的沉积速率从30nm/s降到10nm/s,但大面积薄膜层的厚度差从10nm降低到2nm,薄膜比较均匀。Titanium dioxide film was deposited on a float glass surface by an atmosphere chemical vapor deposition method.The effects of the water vapor,oxygen concentration,substrate temperature and the distance between the reactor and the substrate on the deposition rate were investigated.It is indicated that the deposition rate can be achieved up to a maximum value of 30nm/s when the water vapor concentration is 50mg/L and the oxygen flux is 8% of the total gas flow.The deposition rate can be enhanced from 15 to 30nm/s when the substrate temperature is increased from 300 ℃ to 600 ℃.Furthermore,when the distance between reactor and substrate is increased from 2 to 12mm,the deposition rate is declined from 30 to 10nm/s,and the thickness difference of large film is decreased from 10 to 2nm,indicating the improvement of the uniformity of film.

关 键 词：常压化学气相沉积 二氧化钛 沉积速率 薄膜均匀性 

分 类 号：TB321[一般工业技术—材料科学与工程] TG146.4[金属学及工艺—金属材料]