ZnO-Bi_2O_3系压敏陶瓷的晶界电子结构  

Grainboundary electronic structure of ZnO-Bi_2O_3 based varistor ceramics

作　　者：成鹏飞[1] 李盛涛[2] 李建英[2] 

机构地区：[1]西安工程大学理学院,西安710048 [2]西安交通大学电力设备电气绝缘国家重点实验室,西安710049

出　　处：《物理学报》2010年第1期560-565,共6页Acta Physica Sinica

基　　金：西安工程大学博士科研启动基金(批准号:BS0814);国家杰出青年基金(批准号:50625721)资助的课题~~

摘　　要：测量了ZnO-Bi2O3系压敏陶瓷在不同温度下的介电频谱,基于压敏陶瓷介电特征损耗峰起源于耗尽层内本征缺陷电子松弛过程的理论,计算了ZnO的本征缺陷结构,并进一步求出了晶界的微观电参数和宏观单晶界击穿电压.单晶界击穿电压的理论值与实验测量值符合得很好,这表明本文建立的基于介电谱计算本征缺陷的方法是有效的.Dielectric frequency spectra of ZnO-Bi2O3 based varistor ceramics were measured in the frequency range of 10^-2 Hz-10^6Hz from -100℃ to 20℃ by Novocontrol broadband dielectric spectrometer. The intrinsic defect structure of ZnO was calculated according to the theory which assumes that characteristics dielectric loss peaks of ZnO varistor ceramics origin from electronic relaxation process of intrinsic defects in depletion layer. At the same time the micro-electric parameters of grainboundary and the single grainboundary breakdown voltage Vb were obtained. The accordance of theory with experiment in Vb value indicates that the method to calculate grainboundary electronic structure by dielectric spectroscopy proposed in this paper is resonable.

关 键 词：ZNO压敏陶瓷 晶界电子结构 介电谱 

分 类 号：O474[理学—半导体物理]