空气环境下制备相变特性VO_2薄膜  

The Fabrication of Phase Transition Characteristic VO_2 Thin Films in Air Atmosphere

作　　者：刘洋[1] 徐晓峰[1] 

机构地区：[1]东华大学理学院,上海201620

出　　处：《东华大学学报（自然科学版）》2009年第6期743-746,共4页Journal of Donghua University(Natural Science)

摘　　要：提出了一种制备相变特性VO2薄膜的简易方法.将制备好的金属钒薄膜置于440℃空气下氧化处理,获得相变温度为60℃的单斜VO2薄膜,薄膜方块电阻值在60～85℃范围内变化量达2.2个数量级.X射线衍射分析(XRD)表明薄膜的主要成分为单斜相VO2.探索了此工艺的一般性规律,分析高价态钒对薄膜相变的影响.A simple method on the fabrication of phase transition characteristic VO2 thin films was presented. Monoclinic VO2 film which phase change at 60 ℃was obtained by treating V-metal films in air atmosphere at 440℃. The prepared samples exhibited an 2.2 order change on square resistance from 60℃ to 85 ℃. X-ray diffraction （XRD） showed the chief constituent in film was polycrystalline monoclinic phase VO2. The universal rule of the technique was studied and the influence of the high-valence V to the phase transition characteristic in the films were also discussed.

关 键 词：VO2薄膜 相变 空气环境 氧化 方块电阻 

分 类 号：TN304.21[电子电信—物理电子学]