新型T形边缘场致发射器件的静电分析  

Electrostatic Analysis of the Newly Fabricated T Shaped Disk Edge Field Emitter Arrays

作　　者：汪琛[1] 赵宏卫[1] 尹涵春[1] 王保平[1] 童林夙[1] 

机构地区：[1]东南大学

出　　处：《应用科学学报》1998年第3期313-319,共7页Journal of Applied Sciences

摘　　要：对一种新型Ｔ形边缘场致发射体进行了静电分析，给出了一个三极管单元的数值计算结果．在静电场的计算中采用了一种新的数值方法——非正交有限差分算法，由于所取坐标轴与边界重合，所以该方法能有效地处理任意形状的场致发射体．文中给出了场强及发射电流与几何结构因子的关系曲线、轨迹图及ＩＶ特性曲线。A newly fabricated T shaped disk edge field emitter is considered in this paper. Numerical results are presented for a unit cell, consisting of emitter, gate, and anode. A new algorithm, the finite difference method in a non orthogonal curvilinear coordinate system (FDM NOCCS), is used for the calculation of electrostatic field. With the boundary conforming coordinate lines, this method can deal with microemitter with various shapes efficiently. The dependence of electric field intensity and emitted current upon geometrical factors, the sketch of electron traces and I V characteristics are presented. Several suggestions are given for the geometry determination of the triode in fabrication.

关 键 词：静电分析 边缘场致发射体 T形 平板显示器 

分 类 号：TN873.91[电子电信—信息与通信工程]