In^+离子注入蓝宝石(α-A1_2O_3单晶)的表面改性研究  

Surface modification of sapphire implanted with indium ions

作　　者：谢东珠[1] 朱德彰[1] 曹建清[1] 曹德新[1] 潘浩昌[1] 徐洪杰[1] 

机构地区：[1]中国科学院上海原子核研究所

出　　处：《核技术》1998年第9期513-518,共6页Nuclear Techniques

摘　　要：研究了＜０００１＜和＜１２１０＞晶向蓝宝石（α－Ａｌ２Ｏ３单晶）在注入３６０ｋｅＶ．１×１０￣１６ｃｍ￣－２或１００ｋｅＶ、６×１０￣１６ｃｍ￣－２的Ｉｎ￣＋后产生的损伤、注入层的性能变化和退火行为。实验结果表明，退火过程中损伤的恢复和Ｉｎ的分布与退火气氛有关：在１００ｋｅＶ、６×１０￣１６ｃｍ￣－２的Ｉｎ￣＋注入时，注入层电阻率降低了１０个量级，大小为６．８×１０￣３·ｃｍ，表面损伤层的显微硬度提高了９２％；在３６０ｋｅＶ，１×１０￣１６ｃｍ￣－２的Ｉｎ＋注入时，其表面损伤层的显微硬度提高了４５％，在空气中不同温度下退火后，其显微硬度的变化和损伤的变化具有相同的规律。Single crystals of sapphire (α-Al2O3) implanted with 100keV, 6×1016cm-2 (In+) or 360keV, 1×1016cm2 (In+) have been studied. The implantation was carried out at room temperature but the annealing was performed isothermally in Ar or air atmosphere at temperature in the range from 600℃ to 1100℃ The Rutherford backscattering spectrometry and channeling of 2.4MeV He+ were used to observe the depth distribution of lattice damage and implants. The microhardness and resistivity of the implanted layer were investigated by means of the depth-sensing low-load indentation technique and the electrical conductivity measurement, respectively. Results on the structural changes are correlated with the measured changes of physical properties.

关 键 词：离子注入 蓝宝石 晶格损伤 表面改性 

分 类 号：TQ164.2[化学工程—高温制品工业]