MgO二次电子发射功能薄膜的制备方法  

PREPARATION METHODS OF MgO THIN FILMS WITH SECONDARY ELECTRON EMISSION

作　　者：李晨[1] 罗崇泰[1] 王多书[1] 龙建飞[1] 

机构地区：[1]兰州物理研究所表面工程技术国家级重点实验室,甘肃兰州730000

出　　处：《真空与低温》2009年第4期187-192,共6页Vacuum and Cryogenics

摘　　要：综述了具有二次电子发射功能的MgO薄膜的主要制备方法,包括电子束蒸发、磁控溅射、溶胶-凝胶、分子束外延和脉冲激光沉积法。阐述了各种方法在制备MgO薄膜方面的优点和不足,讨论了不同的制备方法对MgO薄膜结晶取向、表面形貌等性质的影响。分析表明,利用磁控溅射法制备MgO薄膜可获得较高的二次电子发射率。The main methods of preparing MgO thin films,including Electron-beam evaporation,Magnetron sputtering, Sol-gel, MBE and PLD were reviewed.The advantages and shortcomings of these methods in MgO film preparation are represented.The effects of different growth conditions on crystalline orientations and surface morphology of MgO thin film arc discussed.The results show that a higher rate of secondary electron emission has been gained by magnetron sputtering preparing MgO films.

关 键 词：MgO薄膜 二次电子 磁控溅射 结晶取向 

分 类 号：O484.4[理学—固体物理]