热释电薄膜单片式UFPA器件微桥单元结构研究  

Research of the Micro-bridge Fabrication for UFPA Device Pixel

作　　者：马韬[1] 吴传贵[1] 张万里[1] 李言荣[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《红外技术》2010年第1期17-19,共3页Infrared Technology

摘　　要：采用RF溅射制备出Ba0.65Sr0.35TiO3薄膜,剥离法制备出UFPA器件单元所需的图形化金属电极,TMAH溶液进行体硅腐蚀,并且使用保护胶和独特的夹具保护硅片正面免受腐蚀液的腐蚀。总结了一套制作微桥的简便可行的工艺流程,并最终在厚度为300μm的硅基片上成功的制备了厚度小于3μm的面积为100μm×100μm的微桥单元结构。该微桥单元可以满足制备热释电薄膜单片式UFPA器件的要求。We prepared Ba0.65Sr0.35TiO3 thin films by RF sputtering, made the graphical metal electrode for UFPA device pixel by lift-off technique; etched the monocrystalline silicon by TMAH solution. And the micro-patterns of the front side are protected effectively without being etching by the series protective glues and unique fixture. A feasible simple procedure for making micro-bridge was summarized, and eventually obtain 100 μm × 100 μm area, less than 5 μthick micro-bridge fabrication on a 300 μm in thickness silicon chip. Preparation of the micro-bridge fabrication to meet the pyroelectric thin film UFPA device requirements.

关 键 词：单片式 非制冷红外焦平面阵列 微桥 剥离技术 TMAH 

分 类 号：TN304[电子电信—物理电子学]