大气压下冷等离子弧制备SiO_x涂层超疏水表面  

SiO_x Superhydrophobic Coatings Deposited by Cold Plasma Arc at Atmospheric Pressure

作　　者：周振[1] 陈强[1] 刘福平[1] 任兆杏 

机构地区：[1]北京印刷学院印刷包装材料与技术北京市重点实验室,北京102600 [2]合肥研飞电器科技有限公司,合肥230088

出　　处：《真空科学与技术学报》2010年第1期68-71,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：采用冷等离子弧在大气压下以六甲基二硅氧烷为单体制备SiOx超疏水薄膜,研究不同工艺参数对薄膜的结构性能影响。通过傅里叶红外光谱(FTIR)对SiOx薄膜进行了结构分析、通过原子力显微镜(AFM)和数字光学显微镜分析了SiOx薄膜的表面形貌、通过接触角仪测试了所沉积的SiOx薄膜亲/疏水性。在较为详细的研究冷等离子弧制备工艺参数对薄膜的影响后,如基片高度、单体输入量、沉积时间等,我们得到,在基片高度为10cm、单体输入量为90mL.min-1、沉积时间为2min时,可以制备出接触角为160°以上的SiOx超疏水表面。The SiOx superhydrophobic coatings were grown by cold plasma arc deposition at atmospheric pressure with （CH3）3 SiOSi（CH3）3（HMDSO） as the monomer. The impacts of the film growth conditions, including the nozzlesubstrate distance,flow rate of the monomer, and deposition time, on the microstructures and properties of the film were studied. The surface morphologies and hydrophobicity of the coating were characterized with Fourier transform infrared spectroscopy （ FHR ）, atomic force microscopy （AFM）, optical microscopy and other conventional probes. The results show that the SiOx superhydrophobic coatings, with a water contact angle higher than 160°,can be deposited under the optimized conditions： the nozzle-substrate distance of 10 cm, a monomer flow rate of 90mL·min-1 and a deposition time of 2min.

关 键 词：冷等离子体弧 超疏水表面 大气压 SIOX薄膜 

分 类 号：O539[理学—等离子体物理] O646.9[理学—物理]