纤锌矿AlN/GaN/InN/GaN/AlN量子阱的界面和局域光学声子  

Interface and Confined Optical-phonon Modes in Wurtzite AlN/GaN/InN/GaN/AlN Quantum Wells

作　　者：屈媛[1] 班士良[1] 

机构地区：[1]内蒙古大学物理科学与技术学院,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2010年第1期57-65,共9页Journal of Inner Mongolia University：Natural Science Edition

基　　金：高等学校博士学科点专项科研基金资助项目(20070126001);内蒙古自治区自然科学基金重点资助项目(20080404Zd02)

摘　　要：基于介电连续模型和Loudon单轴模型,采用转移矩阵法讨论纤锌矿AlN/GaN/InN/GaN/AlN量子阱的界面和局域光学声子模.结果表明在GaN阱区引入InN纳米凹槽使纤锌矿AlN/GaN/AlN量子阱的光学声子发生较大变化.对给定波矢,在不同的频率范围内,存在两种界面光学声子模和两种局域光学声子模.声子色散关系和静电势分布表现出较AlN/GaN/AlN单量子阱更为复杂的形态.Based on the dielectric continuum model and Loudon＇s single-axis model,the transfer matrix method is adopted to investigate interface and confined optical-phonon modes in wurtzite AlN/GaN/InN/GaN/AlN quantum wells. The results show that the introduction of an InN nanogroove in the center of a quantum well changes optical phonon modes of the system. For a given wave vector of phonons,there are two kinds of interface optical phonons and two kinds of confined optical phonons existing in certain frequency regions. The dispersion relation and electrostatic potential of phonon modes are more complicated than that in a single AlN/GaN/AlN quantum well.

关 键 词：纤锌矿 量子阱 纳米凹槽 光学声子模 

分 类 号：O471.3[理学—半导体物理]