一款0.18μm CMOS辐射加固差分压控振荡器  

A Radiation-hardened-by-design Differential Voltage-controlled Oscillator Implemented in 0.18μm CMOS Process

作　　者：赵振宇[1] 郭斌[1] 张民选[1] 刘衡竹[1] 

机构地区：[1]国防科技大学计算机学院,湖南长沙410073

出　　处：《国防科技大学学报》2009年第6期12-17,共6页Journal of National University of Defense Technology

基　　金：国家自然科学基金资助项目(60836004;60676010;60876024);教育部博士点基金资助项目(20079998015);教育部"高性能微处理器技术"创新团队资助项目(IRT0614)

摘　　要：基于对称负载压控振荡器(VCO)的单粒子瞬变(SET)失效机理,应用设计加固(RHBD)技术分别改进了偏置电路和环形振荡器,设计和实现了一款0.18μm CMOS辐射加固差分VCO。模拟结果表明:加固VCO的SET敏感性大幅降低,同时还降低了抖动对于电源噪声的敏感性。虽然电路结构变化会导致频率下降,但可以通过调整电路尺寸而解决。此外,加固VCO面积开销有所降低,优于其他加固方法。Applying the radiation-hardened-by-design （RHBD） technique to improve the bias generator and the ring oscillator of the differential voltage-controlled oscillator （VCO） with symmetrical loads, a single-event transient （SET） hardened VCO was designed and implemented in 0.18μm CMOS process based on the failure mechanisms. Simulation results indicate that the single-event susceptibility of the VCO is significantly reduced. Simultaneously, it also reduces the jitter sensitivity to supply noise. This new VCO topology results in a decrease in the frequency, but it can be figured out by adjusting the sizes of the delay buffer. Furthermore, the radiation hardened VCO leads to a decreased area requirement.

关 键 词：单粒子效应 单粒子瞬变 压控振荡器 RHBD 

分 类 号：TN386.1[电子电信—物理电子学]