空心玻璃微珠表面磁控溅射镀铝及其对人工介质材料介电性能的影响  

Magnetron sputtering of Al on hollow glass microspheres and its effects on the dielectric properties of artificial dielectric materials

作　　者：熊玉华[1] 杨剑[1] 毛昌辉[1] 

机构地区：[1]北京有色金属研究总院先进电子材料研究所,北京100088

出　　处：《复合材料学报》2009年第6期61-65,共5页Acta Materiae Compositae Sinica

基　　金：原国防科工委资助项目(JPPT1152893)

摘　　要：采用直流磁控溅射法在空心玻璃微珠表面镀Al膜,利用XRD和SEM研究了镀Al微珠的相结构和形貌。将镀Al微珠、未镀Al微珠与高分子粘合剂混合制得人工介质材料,利用网络分析仪测定其在8.2 12.4 GHz频率范围的介电性能。结果表明,采用磁控溅射方法可在玻璃微珠表面包覆金属Al膜,Al膜与基体的结合力较好。在镀铝微珠加入量相同的情况下,玻璃微珠表面铝膜越厚,则人工介质材料的介电常数越大。在Al膜厚度相同的情况下,镀Al微珠加入量越多,则人工介质材料的介电常数越大。所制备的人工介质材料介电损耗小于0.02,密度小于0.8 g/cm3。The hollow glass microspheres were coated with Al by DC magnetron sputtering.XRD and SEM were used to investigate the structure and morphology of the microspheres coated with Al,respectively.The hollow glass microspheres coated and uncoated with Al,as well as the polymer binder were used to prepare the artificial dielectric materials,and the dielectric properties at 8.2-12.4 GHz were measured with a network vector analyzer.The results show that the hollow glass microspheres could be coated with Al film by a magnetron sputtering,and the Al films are combined well with the microsphere substrates.At the same addition amount of the microspheres coated with Al,the dielectric constant of the artificial dielectric materials increases with the thickness of Al film.Meanwhile,keeping the thickness of Al film constant,the dielectric constant of the artificial dielectric materials increases with the addition amount of microspheres coated with Al.The artificial dielectric material has a low dielectric loss of less than 0.02 and a low density of no greater than 0.8 g/cm^3.

关 键 词：镀Al空心玻璃微珠 人工介质材料 介电常数 介电损耗 

分 类 号：TB333[一般工业技术—材料科学与工程] TB34