一种新型紫外正型光刻胶成膜树脂的制备及光刻性能研究  

A Novel UV Photoresist Matrix Resin and Its Photolithographic Processes

作　　者：谢文[1] 刘建国[1] 李平[1] 

机构地区：[1]华中科技大学化学与化工学院,湖北武汉430074

出　　处：《影像科学与光化学》2010年第1期52-58,共7页Imaging Science and Photochemistry

基　　金：广东省科技攻关资助项目(2006B11801004)

摘　　要：本文合成了N-(p-羧基苯基)甲基丙烯酰胺单体,并将其与N-苯基马来酰亚胺共聚得到共聚物聚N-(p-羧基苯基)甲基丙烯酰胺共N-苯基马来酰亚胺(poly(NCMA-co-NPMI)).将此共聚物作为成膜树脂,与感光剂、溶剂等复配得到一种新型耐高温紫外正型光刻胶.本文探讨了该光刻胶的最佳配方组成和最佳光刻工艺.最佳配方组成为:15%—20%成膜树脂,4.5%—6%感光剂和70%—80%溶剂;最佳光刻工艺为:匀胶30 s(4000 rpm),前烘4 min(90℃),感度为30—35mJ/cm^2,在0.2%TMAH溶液显影10 s和后烘2 min(90℃).The poly（N-（p-carboxylphenyl） methacrylamide-co-N-phenylmaleimide） was copolymerized with monomer N- （ p-carboxylphenyl ） methacrylamide （NCMA） and N-phenylmaleimide （ NP- MI）. To apply this copolymer as the matrix resin with photosensitizer and solvents to fomulate a novel thermostable UV positive photoresist. The photoresist formulation and the photolithographic process were studied and optimized. Its optimal formulation was 15%--20% matrix resin, 4.5 %--6 % photo-sensitizer, and 70 %--80 % solvent, and its photolithographic process was spincoating 30 s （4000 rpm）, pre-baking 4 rain at 90 ℃, exposuring 3 min, developing in 0.2 % TMAH aqueous solution for 10 s and then post-baking 2 rain at 90℃.

关 键 词：紫外正型光刻胶 光刻 

分 类 号：TQ320.7[化学工程—合成树脂塑料工业]