稀土La掺杂SnO_2薄膜气敏特性  

Gas sensing properties of SnO_2 films by La-doped

作　　者：谢俊叶[1] 李健[1] 汪良[1] 

机构地区：[1]内蒙古大学物理科学与技术学院,内蒙古呼和浩特010021

出　　处：《传感器与微系统》2010年第1期55-57,61,共4页Transducer and Microsystem Technologies

基　　金：内蒙古自冶区自然科学基金资助项目(200607010109);内蒙古自冶区高等学校科学研究计划资助项目(NJ05030)

摘　　要：用真空热蒸发两步法在玻璃衬底制备SnO2和La掺杂SnO2薄膜。研究氧化、热处理工艺和La掺杂含量对SnO2薄膜结构、气敏特性的影响。结果显示:经T=550℃,t=45 min氧化、热处理后,得到n型金红石结构SnO2薄膜。适当掺La可改善SnO2薄膜结晶状况,掺La后SnO2薄膜对气体的选择性和灵敏性均得到明显的改善,在气体体积分数为1×10-2时,掺La(5%)的SnO2薄膜对乙醇的灵敏度为12;掺La(3%)的SnO薄膜对丙酮的灵敏度可达到14。SnO2 thin films and La-doped SnO2 thin films are prepared by two-step vacuum thermal evaporation on glass substrates. The effect of oxidation, heat-treatment and doping content of La on the structure, sensitive characteristics of SnO2 films is studied. The results show that SnO2 thin films are n-type rutile structure by the heat-treatment of 4：5 rain in O2 at temperature of 500 ℃. The proper doping of La can mend the crystal status of the SnO2 films, for which the choice and sensitive characteristics for gases can be improved obviously after doping. When gas volume fraction is 1 × 10 ^-2, the sensitivity of SnO2 thin films La-doped （5 % ） to ethanol is 12, whereas that can approach to 14 for La-doped（3 % ）.

关 键 词：真空蒸发 氧化 热处理 SNO2薄膜 LA掺杂 气敏特性 

分 类 号：O484.4[理学—固体物理]