沉积温度和退火处理对BCN薄膜结构的影响  

Effects of Deposition Temperature and Annealing on Structure of BCN Thin Films

作　　者：杨琼[1] 王传彬[1] 章嵩[1] 张东明[1] 沈强[1] 张联盟[1] 

机构地区：[1]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《表面技术》2010年第1期63-66,共4页Surface Technology

基　　金：国家自然科学基金资助项目(50772082)

摘　　要：采用脉冲激光沉积技术,在Si(100)基片上制备了BCN薄膜,研究了沉积温度和退火处理对BCN薄膜组分和结构的影响。利用傅里叶变换红外光谱(FTIR)和X射线光电子能谱(XPS)对制备的BCN薄膜进行了表征。结果表明:沉积温度升高时,BCN薄膜的组分无明显改变。所制备的BCN薄膜包含B—N,C—B和C—N化学键,是由杂化的B—C—N键构成的化合物。真空退火温度为700℃时,BCN薄膜结构稳定;大气退火温度达到600℃时,BCN薄膜表面发生氧化分解,同时有C≡N键形成,表明C≡N键具有较好的高温热稳定性。BCN thin films were deposited on Si （100） substrates by pulsed laser deposition. The effects of deposition temperature and annealing on the film composition and structure were investigated. Fourier-transform infrared （FTIR） spectroscopy and X-ray photoelectron spectroscopy （XPS） were used to characterize the BCN thin films. The results show that deposition temperatures have little influence on film composition. FTIR and XPS analyses indicated the as-deposited BCN films contained B--C, N--C and B--N chemical bonds with B--C N atomic hybridization. BCN thin films which annealed in vacuum at 700 ℃ were stable. When annealed in air, the samples were oxidated. Meanwhile, the formation of C≡N bond indicated that it has better thermal stability.

关 键 词：BCN薄膜 沉积温度 退火 脉冲激光沉积 

分 类 号：TG174.444[金属学及工艺—金属表面处理] TG156.2[金属学及工艺—金属学]