芯片背面磨削减薄技术研究  

Studies on Wafer Backside Grinding

作　　者：王仲康[1] 杨生荣[1] 

机构地区：[1]中国电子科技集团公司第四十五研究所,北京东燕郊101601

出　　处：《电子工业专用设备》2010年第1期23-27,共5页Equipment for Electronic Products Manufacturing

摘　　要：通过实验数据和实物照片列出了减薄工艺参数、检测结果;并结合实例研究了现代磨削减薄系统多采用的硅片自旋转磨削技术,探讨脆性材料进行延性域磨削的加工机理。Now the thickness of wafer is being constantly replaced by the thinner and thinner ones,the thinner the wafer is,the better quality must be increased.Super precision grinding is the thinning of semiconductor wafers by removing material from the rear face.In this article,we introduce the grinding process by empirical study,gives the process parameter.

关 键 词：背面减薄 自旋转磨削 亚表面损伤层 总厚度误差 延性域 崩边 

分 类 号：TN305.2[电子电信—物理电子学]