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机构地区:[1]Department of Electronic Engineering,Vanung University [2]Materials & Electro-Optics Research Division,Chung-Shan Institute of Science & Technology
出 处:《Journal of Semiconductors》2010年第2期33-37,共5页半导体学报(英文版)
摘 要:A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit(MMIC),which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The power amplifier(PA) was studied taking into account the linearizer circuit and the coplanar waveguide(CPW) structures.Based on these technologies,the power amplifier,which has a chip size of 1.44×1.10 mm^2,obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region.An input third-order intercept point (IIP3) of-3 dBm,an output third-order intercept point(OIP3) of 21.1 dBm and a power added efficiency(PAE) of 22% were attained,respectively.Finally,the overall power characterization exhibited high gain and high linearity,which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics.This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz.A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit(MMIC),which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The power amplifier(PA) was studied taking into account the linearizer circuit and the coplanar waveguide(CPW) structures.Based on these technologies,the power amplifier,which has a chip size of 1.44×1.10 mm^2,obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region.An input third-order intercept point (IIP3) of-3 dBm,an output third-order intercept point(OIP3) of 21.1 dBm and a power added efficiency(PAE) of 22% were attained,respectively.Finally,the overall power characterization exhibited high gain and high linearity,which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics.This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz.
关 键 词:power amplifier LINEARIZER MMIC CPW
分 类 号:TN722.75[电子电信—电路与系统] TP212[自动化与计算机技术—检测技术与自动化装置]
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