平行栅结构氧化锌场致发射显示器的研制  

Development of the Parallel-Gate Structure of ZnO Field Emission Display

作　　者：林志贤[1] 郭太良[1] 张婷[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《光学学报》2010年第2期518-524,共7页Acta Optica Sinica

基　　金：国家863计划(2008AA03A313);福建省科技重大专项(2004HZ01-2);福建省科技三项经费(2006F5061)资助课题

摘　　要：用陈化处理过的锌粉为原料,采用高温气相氧化法制备四针状氧化锌材料。应用厚膜、光刻工艺和丝网印刷法制作氧化锌场发射阴极阵列。将阴极板与阳极荧光板制成了5英寸(12.7 cm)单色平行栅结构场致发射显示器(FED)并对其进行了场发射性能测试。分析讨论了影响发射性能的栅极电压、阳极电压以及阴极厚度等参数。该FED在约4000 V阳极电压和300 V栅极电压的驱动下能实现全屏发光。实验结果表明,氧化锌平行栅结构FED具有良好的栅极调控作用,场致发射性能良好,具有良好的应用前景。With aging treated zinc powder as raw materials,the tetrapod-like ZnO material was prepared by high-temperature vapour phase oxidation method. The ZnO field emission cathode arrays were prepared by the application of thick-film,lithography and screen printing technologies. The cathode plate and anode plate were made of a 5 inch （12.7 cm） monochrome parallel-gate structure field emission display （FED） panel and its field emission performance was tested. The parameters such as the gate voltage,anode voltage as well as cathode thickness which affect the emission performance were analyzed and discussed. The FED can achieve full-screen light emission by driving at about 4000 V anode voltage and 300 V gate voltage. The experimental results show that the structure of ZnO parallel-gate structure FED has a good regulation,a good field emission performance and good application prospects.

关 键 词：光电子学 场致发射 四针状氧化锌 平行栅结构 发射性能 

分 类 号：TN305.8[电子电信—物理电子学]