降栅压技术在MOSFET驱动中的应用  

Application of Drop Gate Voltage Technology in MOSFET Drive Circuit

作　　者：杨冬平[1] 王莉[1] 江登宇[1] 

机构地区：[1]南京航空航天大学自动化学院,南京210016

出　　处：《电力系统及其自动化学报》2010年第1期1-4,53,共5页Proceedings of the CSU-EPSA

基　　金：国家973基础研究项目(2007CB210303);航空科学基金资助项目(20091952022)

摘　　要：为在短路发生时有效保护金属氧化物半导体场效应管(metal oxide semiconductor field effect transistor),在60V/10A固态功率控制器的驱动电路中,设计降栅压短路保护。通过与MOSFET反串的二极管检测短路故障,一旦发生短路,启动短路保护电路,快速降低MOSFET栅源极电压至其开启电压附近,以增大MOSFET漏源极电阻并使其可控,设计电容放电时间,即可按一定速度关断功率管。仿真和实验结果表明,降栅压短路保护技术能在短路发生时迅速关断MOSFET并在关断过程中起到限流、抑制di/dt、增强抗干扰的作用。In order to effectively protect metal-oxide semiconductor field effect transistor （MOSFET） in the event of short circuit, a drop gate voltage short circuit protection was designed in the drive circuit of 60V/10A solid state power controller. Short circuit fault could be detected through the diode which was in series with the MOSFET reversely. Short circuit protection circuit was started once the short circuit fault occurred. The driver unit pulled down gate-source voltage to the turn-on voltage quickly, thus the drain-source resistance was increased and controlled. And the turn off speed of the MOSFET could be controlled by designing the discharge time of capacitor. The result of simulation and test shows the function of the driver unit with the drop gate voltage technology can turn off MOSFET quickly in short circuit,limit current in the turn-off process, inhibit di/dt and enhance anti-jamming.

关 键 词：金属氧化物半导体场效应管 降栅压 固态功率控制器 短路保护 驱动电路 

分 类 号：TM581[电气工程—电器]