光加热悬浮区熔法制备(Mo_(0.85)Nb_(0.15))Si_2单相单晶体  

(Mo_(0.85)Nb_(0.15))Si_2 Single Phase Single Crystal Prepared by Photothermal Floating Zone Melting Method

作　　者：姜艳[1] 朱鸥[1] 张澜庭[1] 郁金星[1] 吴建生[1] 

机构地区：[1]上海交通大学材料科学与工程学院,上海200240

出　　处：《机械工程材料》2010年第1期38-40,44,共4页Materials For Mechanical Engineering

基　　金：国家自然科学基金资助项目(50571067);上海市浦江人才计划资助项目(05PJ14072)

摘　　要：采用光加热悬浮区熔法制备了(Mo0.85Nb0.15)Si2单晶体,研究了化学成分和生长速度对获得C40结构单晶体的影响。结果表明:采用此法可制备出表面无裂纹的(Mo0.85Nb0.15)Si2单晶体,其尺寸可达8 mm×90 mm,晶体的生长面接近(0001)面,生长形态符合布拉维法则、周期键链(PBC)理论和小面生长理论。（Mo0.85Nb0.15）Si2 single crystals were prepared by using photothermat heating floating-zone melting method. The effects of chemical composition and growth speed on getting the CA0 single crystal were studied. The results show that the crack-free （Mo0.85Nb0.15）Si2 single crystals with 8 mm in diameter and 90 mm in length were prepared using the method. The surface of crystal growth was close to the （0001） plane. The growth morphology accorded with Bravairs law, PBC theory and facet growth theory.

关 键 词：悬浮区熔 单相 单晶体 (Mo0.85Nb0.15)Si2 光加热 

分 类 号：TG146.412[一般工业技术—材料科学与工程]