高密度等离子体源的新发展  

THE RECENT DEVELOPMENT OF HIGH DENSITY PLASMA SOURCES

作　　者：黄光周[1] 张书生[1] 于继荣[1] 梁迪众[1] 杨英杰[1] 

机构地区：[1]华南理工大学

出　　处：《真空与低温》1998年第1期52-56,共5页Vacuum and Cryogenics

基　　金：国家自然科学基金;广东省自然科学基金

摘　　要：介绍了几种高密度等离子体源，重点叙述了新近出现的电感耦合等离子体源ＩＣＰＳ。说明了ＩＣＰＳ的基本原理、结构特点、电磁场分布的数学模型等。还简单介绍了其应用前景和目前存在的问题。In this paper several high density plasma sources are introduced,and inductively coupled plasma sources (ICPS) developed recently are emphasized.The basic principles,the structure of the reactor and the mathematical model about the electromagnetic field of ICPS are explained.The paper also points out the promising applications and existing problems of ICPS.

关 键 词：电感耦合 等离子体源 电子特性 高密度 ICPS 

分 类 号：O53[理学—等离子体物理]