双基区大功率快恢复二极管的研究  

Research on Double-Base Regions High-Power FRD

作　　者：尹启堂[1] 李玉柱[1] 安涛[2] 邢毅[2] 

机构地区：[1]北京京仪椿树整流器有限责任公司,北京100040 [2]西安理工大学,西安710048

出　　处：《半导体技术》2010年第2期129-132,141,共5页Semiconductor Technology

基　　金：电子产业发展基金资助项目(2006-634)

摘　　要：提出了在采用VB=94ρ0n.7数学模型设计双基区p+pinn+结构快速软恢复FRD大功率二极管结构参数中引入η=Wi/Xm=0.25数学模型的方法。采用Si片扩铂和电子辐照共同控制基区少子寿命及分布,并利用该设计方法对ZKR1 000 A/2 600 V结构参数进行了优化设计。对设计参数进行了实验验证,结果表明,器件参数满足设计指标,达到国外同类产品水平。说明该设计方法及各种参数的选取是正确的,寿命控制技术是有效的。为p+pinn+结构二极管设计与制造提供了一种具有重要的指导意义和参考价值的新方法。The η=Wi/Xm=0.25 mathematical model was introduced when adopting mathematical model VB=94ρ0.7n to design structure parameters of high power double base p＋ pinn＋ structured fast softrecovery diodes. Platinum doping and electron irradiation technologies were used to mutually control the base minority carrier lifetime and distribution, the design method was used to optimize the structure parameter design of ZKR1 000 A/2 600 V. The design parameters were tested and verified through experiments, which proved the parameters of diodes meet the designed target and achieved the level of similar products in abroad countries. The results prove that the design method and the selected parameters are correct, lifetime control is effective, and it offers a new method of great directive significance and reference value for the design and manufacturing of p ＋ pinn ＋ structured diodes.

关 键 词：快速恢复二极管 p+pinn+结构 软恢复 少子寿命 

分 类 号：TN31[电子电信—物理电子学]