提高功率开关晶体管高温反偏能力的研究  

Research on the Improving the Function Under High Temperature and Reverse Bias of Power Switch Transistor

作　　者：林洁馨[1,2] 杨发顺[1,2] 马奎[1] 龚红[1] 

机构地区：[1]贵州大学电子科学系,贵阳550025 [2]贵州省微纳电子技术重点实验室,贵阳550025

出　　处：《半导体技术》2010年第2期133-136,共4页Semiconductor Technology

基　　金：贵州省重点实验室项目(Z字[2007]4003)

摘　　要：影响大功率开关晶体管高温反偏能力的主要因素是表面沾污。从大功率开关晶体管表面沾污的主要来源、杂质类型上分析了半导体功率器件高温反偏的失效机理。为了改善高温反偏条件下功率晶体管的性能,结合实验室现有的条件,从SiO2的生长工艺和芯片表面钝化技术这两个方面出发,找到了有效的工艺路线。采用C2HCl3掺Cl氧化工艺和聚酰亚胺表面钝化工艺,有效地减轻和消除了芯片制造过程中的表面沾污,提高了产品的质量和在高温环境下的可靠性。Contamination on the surface of Si is the principal factor for high temperature reverse bias of power switch transistors. The failure mechanism was analyzed from device source and types of the contamination on Si surface. In order to improve the function of a power device, the valid process was found from the growth process of SiO2 and surface passivation technology of semiconductor wafers in the lab experimental condition. The method is to apply the oxidation with Cl adopting chlorylene and surface passivation technology using polyimide to reduce or even eliminate the contamination on the surface of a wafer and to raise the quality and reliability under high temperature of the product effectually.

关 键 词：高温反偏 掺氯氧化 聚酰亚胺 表面钝化技术 

分 类 号：TN431[电子电信—微电子学与固体电子学]