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出 处:《半导体技术》2010年第2期181-185,共5页Semiconductor Technology
摘 要:通过功率LED器件封装工艺技术的改进来降低芯片结温,从而减缓器件光衰速率,延长其预期的工作寿命时间。对用于封装的关键原材料的选取进行了对比实验,指出了采用纳米级材料改进导热可降低热阻,论述了正确选用混胶材料和工艺,可以减缓器件光衰速率,达到在较高的环境温度条件下,器件使用寿命大于50 000 h。论述了器件芯片的结温对光、电、色性能的影响和不同结温其预期工作寿命时间也不同的关联性。The power LED device packaging process technology was improved to reduce the chip junction temperature, so the LED devices brightness decay rate was slowed down to extend the expected life time. The key raw materials used for packaging were compared by tests. It is pointed out that nano-scale materials can be use to reduced the thermal resistance. Correct selection of mixed plastic materials and processes can slow down the brightness decay rate of device, device lifetime greater than 50 000 h was achieved at a higher ambient temperature conditions. The effects of chip on light, electricity, and the color properties were discussed, and the different junction temperature resulting in different working life time were also mentioned
分 类 号:TN306[电子电信—物理电子学]
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