AlGaInAs半导体饱和吸收体调Q特性的理论与实验研究  

Theoretical and Experimental Study on the Q-switching Characteristics of AlGaInAs Saturable Absorber

作　　者：张真[1] 张行愚[1] 王青圃[1] 刘兆军[1] 丛振华[1] 陈晓寒[1] 范书振[1] 张琛[1] 

机构地区：[1]山东大学信息科学与工程学院,济南250100

出　　处：《光子学报》2010年第2期193-196,共4页Acta Photonica Sinica

基　　金：国家自然科学基金(60778012)资助

摘　　要：利用通过金属化学气相沉积法长成的AlGaInAs饱和吸收体,对808nmLD泵浦的Nd∶YVO4键合晶体进行被动调Q,获得了波长为1.06μm的激光脉冲,测量了脉冲能量、脉冲宽度、脉冲重复率随泵浦功率的变化.当泵浦功率为10.57W时,激光平均输出功率为3.45W,斜效率为39%,重复频率达到最大值101kHz.当泵浦功率为8.07W时,脉冲宽度达到最小值1.76ns.利用速率方程对该激光器进行理论分析,计算出输出脉冲能量、峰值功率、脉冲宽度和重复频率的理论值,实验结果和理论结果基本一致.The A1GaInAs semiconductor saturable absorber grown by Metal-organic Chemical Vapor Deposition is used as the saturable absorber in a 808 nm LD-pumped passively Q-switched Nd ： YVO4 laser at 1.06 μm. The dependences of the pulse energy, pulse width,pulse repetition rate on the pumping power are measured. With an incident pump power of 10.57 W,an average output power of 3.4 W is obtained,and the corresponding slope efficiency is 39%. At this pump power,the repetition rate reaches the maximum value of 101 kHz. The Q-switched pulse width reaches the minimum of 1. 76 ns with an incident pump power of 8.07 W. Using the rate equations of passively Q-switched lasers, the theoretical results for the pulse energy, pulse width, pulse repetition rate are obtained, which show an agreement with the experimental results on the whole.

关 键 词：激光物理 ALGAINAS 饱和吸收体 调Q 速率方程 

分 类 号：TN248.1[电子电信—物理电子学]