退火处理对ZnO/Si异质结光电转换特性的影响  

Influence of Annealing Treatment on Photovoltaic Property of ZnO/Si Heterojunction

作　　者：张伟英[1,2] 刘振中[1] 刘照军[1] 梁会琴[1] 傅竹西[2] 

机构地区：[1]洛阳师范学院物理与电子信息学院,洛阳471022 [2]中国科学技术大学物理系,合肥230026

出　　处：《材料导报》2010年第4期14-16,共3页Materials Reports

基　　金：国家自然科学基金(50532070);中国科学院三期创新项目(KJCX3.5YW.W01)

摘　　要：采用直流反应溅射方法在p型Si(100)衬底上生长掺Al的ZnO薄膜,并研究退火处理对ZnO薄膜性质的影响。XRD测量结果表明,ZnO薄膜为六方纤锌矿结构,退火后薄膜的晶粒长大,晶界减少;暗态I-V特性曲线表明,ZnO/Si异质结具有明显的整流特性,退火后由于晶粒间界减少和空位浓度降低使反向漏电流降低1个量级;此外,退火处理能在一定程度上改善异质结的光伏效应,使其转换效率提高。ZnO films doped with A1 is prepared on p type Si （100） substrates by DC reactive sputtering. Influence of annealing treatment on photovohaic property of ZnO/Si heterojunction is investigated. XRD results demonstrate that the ZnO films has hexagnal wurtzite structure with strong c axis orientation, and crystal grain becomes larger by annealing. I-V characteristics suggest that heterojunction show apparently rectifying behavior, and reverse leak current reduces one order of magnitude by annealing. It is worthy to emphasize that the photovohaic convertion efficient is also improved obviouly.

关 键 词：退火 异质结 光电转换 

分 类 号：TN304.21[电子电信—物理电子学] TQ164.8[化学工程—高温制品工业]