一种新型多官能度乙烯基醚树脂的制备及在光刻负胶中的应用  

Synthesis of a novel vinyl ether functionalized resin and its application in negative photoresist

作　　者：陈明[1] 张鉴[1] 李志炜[1] 葛海雄[1] 袁长胜[1] 陈延峰[1] 

机构地区：[1]南京大学材料科学与工程系,南京210093

出　　处：《南京大学学报（自然科学版）》2010年第1期34-40,共7页Journal of Nanjing University（Natural Science）

基　　金：国家自然科学基金(50673040)

摘　　要：以苯乙烯,2-异氰酸甲基丙烯酸酯(IEMA),以及乙二醇单乙烯基醚(EGME)等为原料,分两步合成了一种主链为聚苯乙烯结构的多乙烯基醚(VEs)树脂(PSIM-VE).通过测定该树脂的红外光谱、核磁氢谱及核磁碳谱,确定了其分子结构式.测定了该树脂的紫外透光性,并且研究了基于该树脂的紫外光刻负胶以甲苯及四氢呋喃为溶剂时的成膜性及紫外光固化性能.通过接触式光刻工艺,在光刻胶膜层上得到了4μm周期的光栅结构.A novel UV curable vinyl ether functionalized polymer resin was synthesized via two steps：（1） free radical copolymerization of styrene and 2-isocyanatoethyl methacrylate （IEMA） to form the backbone of the resin molecules with pendent reactive isocyanate groups; （2） reaction with ethylene glycol vinyl ether （EGME） to graft vinyl ether groups to the backbone. The FTIR,1HNMR and 13CNMR spectra of the synthesized resin were used to determine its molecular structure. The transmission of light of this resin was measured by UV-visible spectrometer. The film formation property of the resin by spin-coating method was studied with the solvent of toluene and THF. This resin was applied as a negative photoresist and 4 μm pitch grating structures were achieved on the film of the photoresist by UV photolithography. The mechanism of this negative resist is that the vinyl ether groups crosslinked under the exposure of UV-light and made the exposed portion unsoluble to the developer. The unexposed portion was dissolved ty the developer. The grating patterns were formed on the substrate.

关 键 词：乙烯基醚 自由基共聚合 紫外光固化 光刻负胶 

分 类 号：TN305.7[电子电信—物理电子学]