不同波长三倍频DKDP晶体的激光损伤  

Laser-induced damage of DKDP crystal for third harmonic generation under different wavelengths

作　　者：刘宝安[1] 孙绍涛 季来林[2] 赵元安[3] 胡国行[3] 徐明霞[1] 高慧[1] 王正平[1] 孙洵[1] 许心光[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]中国工程物理研究院上海激光等离子体研究所,上海201800 [3]中国科学院上海光学精密机械研究所,上海201800

出　　处：《强激光与粒子束》2010年第2期323-326,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金委员会与中国工程物理研究院联合基金项目(10676019);国家高技术发展计划项目

摘　　要：采用传统降温法,利用高纯原料从氘化程度为80%的溶液生长了四方相磷酸二氘钾(DKDP)晶体,并按Ⅱ类三倍频方式切割晶体。三倍频用DKDP晶体的最大问题在于其抗光伤阈值低于KDP晶体,严重限制了激光输出的能量密度和晶体使用寿命。考察了不同波长下三倍频DKDP晶体的损伤阈值,以及激光退火效应。实验表明,激光退火对于DKDP晶体的损伤阈值有显著的提升作用,基频、倍频、三倍频的提升效果分别达到1.4,1.9,2.7倍,是改善DKDP晶体抗光伤能力的有效途径。DKDP crystal was grown from 80%-deuterated solution of high pure materials and the crystal was cut to type Ⅱ tripler sample. The major problem of DKDP crystal for third harmonic generation （THG） is its low laser-induced damage threshold with respect to KDP, which greatly limits .energy fluence of output laser and crystals＇ life. Laser-induced damage thres-hold of DKDP crystal for THG was measured under different wavelengths and the effect of laser annealing was also investigated. The experiment shows that laser annealing could obviously improve laser-induced damage threshold of DKDP crystal. The thres-hold is improved to 1.4, 1.9 or 2.7 times that before annealing for fundamental, second or third harmonic, respectively. Thus laser annealing is an effective approach to enhance laser-induced damage resistance of DKDP crystal.

关 键 词：四方相磷酸二氘钾晶体 三倍频 激光损伤 激光退火 

分 类 号：O782.1[理学—晶体学]