磁控共溅射法制备Zn_(1-x)Cr_xO薄膜及其结构性能  

Structural properties of Cr-doped ZnO films grown using magnetron co-sputtering method

作　　者：朱珊珊[1] 陈希明[1] 肖琦[1] 吴小国[1] 

机构地区：[1]天津理工大学电子信息工程学院,天津300384

出　　处：《天津理工大学学报》2010年第1期25-27,共3页Journal of Tianjin University of Technology

基　　金：天津市自然科学基金重点项目(06YFJZJC00100);天津市薄膜电子与通信器件重点实验室资助

摘　　要：本文采用磁控共溅射方法在玻璃衬底上制备了Cr掺杂ZnO薄膜,通过改变Cr溅射功率,从而改变Cr的掺杂量.介绍了Zn1-xCrxO薄膜的制备方法,分别用X射线衍射(XRD)和X射线光电子能谱(XPS)对不同Cr溅射功率的一系列薄膜的结构,成份、元素含量及价态等性能进行了分析.结果表明,Cr溅射功率为20 W的样品,具有最好的c轴择优取向,Cr以+3价形式掺入薄膜中,Cr3+替代了部分Zn2+.In this paper Cr-doped ZnO films were prepared on glass substrates by magnetron co-sputtering method, to change the DC power of Cr so as to change the doping concentration of it, introducing the preparing of the Zn1-x CrxO films. A series of films with different Cr power whose properties such as structure, composition, element content and valence state, were measured by XRD and XPS. The result indicates that sample with Cr power of 20 W, had the best preferential c-axis orientation, Cr doped in the film with ＋ 3 valence state, Cr^3＋ substitute Zn^2＋ position in crystal.

关 键 词：磁控共溅射 Cr掺杂ZnO薄膜 制备 性能 

分 类 号：TN304.055[电子电信—物理电子学]