新型Al_2O_3/BCB多层薄膜复合介质材料的传输线损耗特性  

Transmission Line Loss Based on a New Al_2O_3/BCB Multilayer Thin-film Substrate

作　　者：周紫卓[1] 王伟[1] 谈惠祖[1] 孙晓玮[1] 

机构地区：[1]中科院上海微系统与信息技术研究所,上海200050

出　　处：《功能材料与器件学报》2010年第1期57-62,共6页Journal of Functional Materials and Devices

基　　金：新型薄膜微纳无源器件模型及其关键技术问题研究(编号:60771058)

摘　　要：本文结合功能材料Al2O3和BCB(苯并环丁烯树脂)的特点,创新性地提出了Si/Al2O3/BCB多层薄膜复合结构的衬底,利用Al2O3高介电常数的优点和BCB薄膜工艺制备厚度的灵活性实现了低传输损耗。本研究采用与CMOS相兼容的半导体制造工艺在三种不同衬底(Si、Si/BCB和Si/Al2O3/BCB)上制作了CPW结构的传输线,通过仿真、测量、比较和分析其传输损耗特性得出Si/Al2O3/BCB多层薄膜复合结构衬底有效地降低了普通硅衬底的高频损耗(20GHz时CPW传输线的损耗为1.18dB/mm),实现了微波毫米波电路低损耗传输线,具有广泛的应用前景。This paper reports the measurement of a new Si/Al2O3/BCB muhilayer thin -film substrate based on the high dielectric constant of Al2O3 thin film and the thick - film of BCB. CPW structure transmission lines were fabricated on three different substrates （Si, Si/BCB and Si/Al2O3/BCB） by the technique compatible with the CMOS semiconductor fabrication process. The simulated and measured results showed that Si/Al2O3/BCB multilayer substrate could effectively reduce the transmission line loss on normal silicon based substrate （loss for CPW is 1.18dB/mm at 20GHz） , which realized the low transmission loss of RF and Microwave circuits, and demonstrated wide application potentials.

关 键 词：AL2O3 BCB CPW 传输损耗 

分 类 号：TN929.11[电子电信—通信与信息系统] TQ174.758[电子电信—信息与通信工程]