Ni/Au、Pd/Au与p-AlGaN材料的接触特性  

Ni/Au and Pd/Au contacts to p-AlGaN

作　　者：白云[1] 麻芃[1] 朱杰[1] 刘键[1] 刘新宇[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《功能材料与器件学报》2010年第1期77-80,共4页Journal of Functional Materials and Devices

摘　　要：在AlGaNpin型日盲紫外探测器结构中的p-AlGaN层上生长了Ni/Au和Pd/Au,并在600～850℃温度下进行快速热退火,测量其退火前后传输线模型中各金属接触间的电学性质。实验发现,Ni/Au与Pd/Au在p-AlGaN上表现出了不同的接触性能。为了更好的说明金属与p-AlGaN材料接触之间在退火后电流的变化,还测量了p-AlGaN材料裸片两点之间I-V曲线在退火前后的变化。实验表明,比起Ni/Au来,Pd/Au在p-AlGaN材料上制备欧姆接触具有一定的优势,并在文中进行了分析。Contacts to p - AlGaN layer using Ni/Au and Pd/Au are reported. The metals Ni/Au and Pd/ Au deposited on p - AlGaN layer （ x = 0.46 ） were annealed from 600 - 850℃. The dependence of the contacts properties on annealing temperature in N2 is examined via TLM measurements. Experiments show some different contacts properties between Ni/Au and Pd/Au on p - AlGaN. The I - V properties of bare p - AlGaN are measured to better analyze the change in I - V curves of Ni/Au and Pd/Au contacts. The results show the effectiveness of Pd/Au than Ni/Au to make the ohmic contacts to p - AlGaN.

关 键 词：p-AlGaN 高Al组分 欧姆接触 

分 类 号：TN23[电子电信—物理电子学]