磁控溅射法制备Ag掺杂p型ZnO薄膜的研究  

Preparation of Ag-Doped p-Type ZnO Thin Films by Reactive Magnetron Sputtering

作　　者：王莉[1] 何俊刚[1] 陈环[1] 刘志宇[1] 傅刚[1] 

机构地区：[1]广州大学物理电子工程学院,广州510006

出　　处：《半导体技术》2010年第3期225-227,232,共4页Semiconductor Technology

摘　　要：采用磁控溅射法在石英玻璃基片上生长ZnO和ZnO:Ag薄膜。借助于SEM、XRD、霍尔测试、透射谱测试等方法,分析了O2气氛下退火温度对薄膜结构和电学性能的影响。霍尔测试结果表明,Ag掺杂ZnO薄膜经过600℃的O2气氛中热处理转变为p型电导。薄膜的XRD测试表明晶粒大小随退火温度升高而增大,所有薄膜样品只出现(002)衍射峰,呈现c轴取向生长。薄膜对可见光的透过率大于83%,其吸收限为378nm。ZnO and Ag-doped ZnO thin films were prepared on quartzlite glass substrates by reactive magnetron sputtering. The effects of post-growth annealing temperatures on the microstructure and electrical properties of the ZnO：Ag thin films were studied, using SEM, XRD, Hall measurement, transmission spectrum test. The Hall measurement shows that ZnO：Ag thin films transform to p-type conduction after heat treatment at 600 ℃ in O2 atmosphere. The XRD shows that the grain size grows with rising annealing temperature. Only diffraction peaks corresponding to the ZnO （002） planes were observed in all samples, indicating the c-axis as the preferable crystal orientation. The transmittance of the films was above 83 % for visible light, and the absorption edge was about 378 nm.

关 键 词：氧化锌薄膜 银掺杂 P型半导体 磁控溅射 霍尔测试 

分 类 号：TN305.92[电子电信—物理电子学]